Publications

• n+ laser doping demonstrated from POx/Al2O3 passivation stacks on silicon. • Metallised J0 of 540 fA cm−2 for n+ laser-doped region with Rsheet of 39.5 Ω/□. • Consistent with values for POCl3 furnace diffusions, indicating minimal defects. • Same POx/Al2O3 stack provides J0 of 2.5 fA cm−2 on undiffused planar surfaces. • 23.6% simulated efficiency for laser-doped n-type PERL cell based on POx/Al2O3.

In this paper, the fabrication of a 22.8% efficient all‐laser‐doped IBC solar cell with localized boron and phosphorus doped contacts is reported.

In this work, we introduce novel test structures and perform numerical simulations to accurately determine the contact properties of 30 μm × 30 μm-sized laser-doped localized contacts.