Publications

• n+ laser doping demonstrated from POx/Al2O3 passivation stacks on silicon. • Metallised J0 of 540 fA cm−2 for n+ laser-doped region with Rsheet of 39.5 Ω/□. • Consistent with values for POCl3 furnace diffusions, indicating minimal defects. • Same POx/Al2O3 stack provides J0 of 2.5 fA cm−2 on undiffused planar surfaces. • 23.6% simulated efficiency for laser-doped n-type PERL cell based on POx/Al2O3.

In this work, we find that the crystallization of ALD TiOx is very sensitive to the film’s thickness, where a small increase in TiOx thickness can trigger a phase change from amorphous TiOx into anatase, which causes a significant increase in J0s. More importantly, we demonstrate that the incorporation of Al ions into the TiOx films inhibits crystallization, which in turn retains excellent passivation for thicker TiOx.

We present a passivated contact technology based on polysilicon deposited using low pressure chemical vapour deposition (LPCVD) over an ultra-thin silicon dioxide layer, which achieves an excellent surface passivation with implied open-circuit voltage of 735 mV, a recombination prefactor below 1 fA cm−2 and contact resistivity below 1 mΩcm2.

Overview of my contributions and access to presentations and papers.